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1, introduction in the fields of comm unication systems and consumer electronics (e.g.catv receivers, shf broadcasting reseivers and bs/cs tuners), analog and degital ics from uhf to microwave frequency range are widely used. these analog and degital ics are required for compactness, economy and high reliability. to respond to above described requirment, nec has developed many kinds of si-monolithic microwave ics. in this report, the device structure and the results of the reliability qualification tests on si mmics are described. qualification tests have been performed for the mmic and the mmic elements such as transistor, resistor and capacitor. 2. device structure fig.l fig.3 show the cross sectional view transistor cell, capacitor and resistor. the mns(metal nitride ~miconductor) sturcture is adoped in capacitors. the resistors are formed by polysilicon. the features of transistor cell are described below: (1) an optimal epitaxial layer grown by vpe(vapour phased epitaxy). (2) oxide isolation to reduce parasitic capacitance. (3) a shallow and higher impurity doped base by ion implantation. a shallow emitter by diffusion from as-doped polysilicon. (4) an emitter of 0.5 .u m width processed by photo lithograph. (5) a nitride passivation film. (6) a ti-pt-au electrode structure.
3. .qualification tests (1) qualification tests on basic element. design rules for ics are qualified by performing qualification test on each basic elements consisting ofic such as transistor, capacitor and resistor . a series of qualification tests on basic elements consist of following items: (a) high temperature storage tests at ta=259c,295 and 337c on transistor and resistor . (b) high temperature dc bias test at tj=200c on capacitor. (2) qualification tests on ic qualification tests of ics are performed on typical types of each family classified by integration level, function, structure and .production technique applied. a series of qualification tests on ic consist of following items: (a) environmental tests (thermal and mechanical). (b) radiation hardness. (c) solderability strength. (d) high temperature storage tests at ta=200c. (e) high temperature dc bias tests at tj=200c. test conditions and sample size of the qualification tests are shown table 1. the delta parameters and criteria are shown in table 2-1 and table 2-2.
test results and discussions 4. i basic element i (1) transistor the summary of qualification test results are presented at table 3. high temperature storage test high temperature storage test at ta=259c,295c and 337c were performed using 10 samples. the test results are shown table 4. at the high temperature stress level(ta=337c), the samples have started to fail from 100 hours. the failure mode is hfe degradation. this is caused by diffusion of au into si due to degradation of pt as barrier . the arrhenius plots on the tests are shown in fig. 4, using f::::.ea=1.8e v that has been confirmed at au electrode microwave si transistor . from this plot, the estimated mtf for transistor at tj=100c is 3.0 x 1011 hours. (2) resistor element poly silicon resistor high temperature storage tests at ta=259c, 295c and 337c were performed using 10 samples for 3000 hours. the test results are shown table 5. the arrhenius plots on the test are shown in fig. 4. this arrhenius plot gives the activation energy of 1.8ev. from this plot, the estimated mtf for polysilcon resistor at ta=100c is 3.0 x 1011 hours. (3) capacitor biased test on 10 mns capacitors has been performed with condition of 6v at ta=200c for 5000 hours. the test results are shown at table 6. no failure was observed. consequently, each basic element is considered to be sufficiently reliable for constructing mmi cs.
~~ qualification test have performed for prescaler ic .upb1509b as the typical of the family which are classified by process and structure of wafer fabrication. cd high temperature storage test high temperature storage test at ta=200c was performed for .1 pb1509b using 20 samples. this test was performed for 5000 hours. the test results are shown table 7. no failure has been observed for 5000 hours. (?) high temperature dc bias test high temperature dc bias test at tj=200c was performed for .1 pb1509b using 100 samples. this test was performed for 5000 hours. the test results are shown table 8. no failure has been observed for 5000 hours. 6icc and 6pout changes are shown in fig. 5. any significant variation of the two parameters has not been observed during 5000 hours at tj=200c. if one device was failed at the test period of 5000 hours at tj=200c, the mtf of 6icc or 6pout line were drawn in fig. 6, using 6ea=1.8ev, which is confirmed by the results of au electrode microwave si transistor. mtf at tj=100c is estimated to be over 1 x 109 hours. @ thermal and mechanical environmental test and solderability strength. as shown table 3, no failure was obserbed with respect to thermal envionmental test, mechanical environmental test and solderability strength.
@ radiation hardness gamma-ray irradiation test was carried out for prescaler ic .u pb1509b. dose rate is 1 x 105 and 1 x 106 rad/hour. the test results are shown table 3. no failure was observed with respect to this test. consequently, it was confirmed that the si mmics are sufficiently tough from the view point of radiation hardness. 5. conclusion accelerated life test have been performed on prescaler, their tr, resistor and capacitor. mtf at tj=100c is estimated to be over 1 x 109 hours. radiation hardness tests have been carried out on prescaler . no degradation was observed up to 1 x 106 rad gamma ray irradiation. it has confirmed that the si mmics are sufficiently reliable for practical applications.
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high temperature storage test of transistor element table 4 number of failures quantity test condition hours 1000 2000 72 144 240 400 650 0 0 0 0 0 0 0 0 ta=259t 10 0 * * 8 0 0 0 0 3 ta=295c 10 0 0 * * * * 9 9 10 ta=337c 10 0 3 7 *hfe degradation high temperature storage test of resistor element table 5 poly silicon resistor of number failures quantity test condition hours 1500 2000 2500 3000 50 100 300 500 1000 q- 0 0 0 0 ta=259c 0 0 0 0 0 10 0 5 7 ta=295c 0 0 0 1 3 5 10 0 0 7 10 ta=337c 10 0 0 2 5
table 6 high temperature dc bia.s test of capacitor number 5001 of 1000 failures ~ quantity 5000 hours test condition 0 200 t) tj=200c 10 0 0 0 0 0 high temperature storage test of si mmic table 7 number ~ of 1000 failures ri""5oo quantity hours test condition 0 168 3000 0 0 0 0 0 0 .upb1509b 20 ta=200c condition test high temperature dc bias test of si mmic table 8 number of 1000 failures ri""5ool quantity test condition 5000 0 168 500 hours 0 0 0 0 .upb1509b 100 0 0 tj=200c condition test

f.icc(%) 10.00% 8.00% 6.00% 4.00% ~ max ---ave -+-nin 2.00% 0.00% -2.00% -4.00% -6.00% -8.00% -10.00% 6.po(db) 2 5 1 0.5 0 -0.5 -1.5 -2 fig.5 ~pb15o9b parameter changes on high temperature dc bias test
arrhnius plot temperature of dc prescaler bias test on high fig.6

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